DMN32D2LDF common source dual n-channel enhancement mode fiel d effect transistor features ? common source dual n-channel mosfet ? low on-resistance ? very low gate threshold voltage, 1.2v max ? low input capacitance ? fast switching speed ? low input/output leakage ? small surface mount package ? esd protected gate ? lead free by design/rohs compliant (note 2) ? "green" device (note 3) ? qualified to aec-q 101 standards for high reliability mechanical data ? case: sot-353 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020c ? terminal connecti ons: see diagram ? terminals: finish ? matte tin annealed over alloy 42 leadframe. solderable per mil-std-202, method 208 ? marking information: see page 3 ? ordering information: see page 3 ? weight: 0.006 grams (approximate) new product g 1 d 1 g 2 d 2 s q 1 q 2 g 2 sg 1 d 2 d 1 sot-353 esd protected top view bottom view schematic diagram top view maximum ratings q 1 , q 2 @t a = 25c unless otherwise specified characteristic symbol value unit drain source voltage v dss 30 v gate-source voltage v gss 10 v drain current (note 1) i d 400 ma thermal characteristics q 1 , q 2 @t a = 25c unless otherwise specified total power dissipation (note 1) p d 280 mw thermal resistance, junction to ambient (note 1) r ja 446 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics q 1 , q 2 @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 4) drain-source breakdown voltage bv dss 30 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current @ t c = 25c i dss ? ? 1 a v ds = 30v, v gs = 0v gate-body leakage i gss ? ? 10 1 a v gs = 10v, v ds = 0v v gs = 5v, v ds = 0v on characteristics (note 4) gate threshold voltage v gs(th) 0.6 ? 1.2 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) ? ? ? ? ? ? 2.2 1.5 1.2 v gs = 1.8v, i d = 20ma v gs = 2.5v, i d = 20ma v gs = 4.0v, i d = 100ma forward transconductance |y fs | 100 ? ? ms v ds =10v, i d = 0.1a source-drain diode forward voltage v sd 0.5 ? 1.4 v v gs = 0v, i s = 115ma dynamic characteristics input capacitance c iss ? 39 ? pf output capacitance c oss ? 10 ? pf reverse transfer capacitance c rss ? 3.6 ? pf v ds = 3v, v gs = 0v f = 1.0mhz turn-on time t on ? 11 ? ns switching time turn-off time t off ? 51 ? ns v dd = 5v, i d = 10 ma, v gs = 0-5v notes: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad layout document ap02001, which can be found on our website at http:// www.di odes.com/datas heets/ap02001.pdf. 2. no purposefully added lead. 3. diodes inc.?s ?green? policy c an be found on our website at http:// www.di odes.com/products/l ead_free/index.php. 4. short duration pulse test us ed to minimize self-heating effect. DMN32D2LDF document number: ds31238 rev. 3 - 2 1 of 4 www.diodes.com january 2008 ? diodes incorporated
DMN32D2LDF new product DMN32D2LDF document number: ds31238 rev. 3 - 2 2 of 4 www.diodes.com january 2008 ? diodes incorporated
DMN32D2LDF 0.6 0.8 1 1.2 1.4 1.6 1.8 -75 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , static drain-source on-resistance (normalized) ds(on) fig. 7 normalized static drain-source on-resistance vs. ambient temperature v = 4v i = 100ma gs d v = 2.5v i = 20ma gs d v = 1.8v i = 20ma gs d 0 10 20 30 40 50 0 5 10 15 20 v , drain-source voltage (v) ds c , c a p a c i t an c e (p f ) t fig. 10 typical capacitance c iss c oss c rss f = 1 mhz new product ordering information (note 5) part number case packaging DMN32D2LDF-7 sot-353 3000/tape & reel notes: 5. for packaging det ails, go to our website at http://www.di odes.com/datasheets/ap02007.pdf . marking information (note 6) kdv s d 2 g 1 d 1 g 2 ym kdv = product type marking code (see note 6) ym = date code marking y = year ex: u = 2007 m = month ex: 9 = september notes: 6. package is non-polarized. part s may be on reel in orientation illustrat ed, 180 rotated, or mixed (both ways). date code key year 2007 2008 2009 2010 2011 2012 code u v w x y z month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d DMN32D2LDF document number: ds31238 rev. 3 - 2 3 of 4 www.diodes.com january 2008 ? diodes incorporated
DMN32D2LDF package outline dimensions a m j l d b c h k f top view sot-353 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal f 0.30 0.40 h 1.80 2.20 j ? 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 0 8 all dimensions in mm new product suggested pad layout x z y c e e g dimensions value (in mm) z 2.5 g 1.3 x 0.42 y 0.6 c 1.9 e 0.65 important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the ri ghts of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products are represented on our website, harmless against all damages. life support diodes incorporated products are not authoriz ed for use as critical components in life support devices or systems without the e xpressed written approval of the president of diodes incorporated. DMN32D2LDF document number: ds31238 rev. 3 - 2 4 of 4 www.diodes.com january 2008 ? diodes incorporated
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